STMicroelectronics BDW84C
BDW83C IS A SGS-THOMSON PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN 3 2 1 s APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDW83C is a silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. It is intended for use in power linear and switching applications. The complementary type is BDW84C.| Part No. | BDW84C |
|---|---|
| Datasheet | BDW84C Download |
| Manufacturer |  STMicroelectronics |
| Description | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T stg Tj June 1997 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value BDW83C BDW84C 100 100 5 15 40 0.5 130 -65 to 150 150 Unit V V V A A A W o C o C 1/4 BDW83C / BDW84C THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.96 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEO I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = 100 V V CB = 100 V V CE = 40 V V EB = 5 V I C = 30 mA IC = 6 A I C = 15 A IC = 6 A IC = 6 A I C = 15 A I F = 10 A V CC = 30 V I C = 10 A R B1 = 300 Ω R B2 = 150 Ω I B1 = - I B2 = 40 mA 0.9 6 I B = 12 mA I B = 150 mA V CE = 3 A V CE =3 V V CE =3 V 750 100 100 2.5 4 2.5 20000 4 V µs µs T case = 150 C o Min.
