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BDW83B - NPN Transistor

Download the BDW83B datasheet PDF. This datasheet also covers the BDW83 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector Current -IC= 15A High DC Current Gain-hFE= 750(Min)@ IC= 6A Complement to Type BDW84/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BDW83-INCHANGE.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number Description
BDW83 NPN Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)@ IC= 6A ·Complement to Type BDW84/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDW83 45 VCER Collector-Emitter Voltage BDW83A 60 BDW83B 80 BDW83C 100 BDW83 45 VCEO Collector-Emitter Voltage BDW83A 60 BDW83B 80 BDW83C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 IB Base Current-Continuous 0.5 Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ 3.