Download BDW83B Datasheet PDF
BDW83B page 2
Page 2

BDW83B Description

1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW83/A/B/C TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. IB= 12mA 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 150mA 4.0 V VBE(on) Base-Emitter On Voltage IC= 6A.