Datasheet4U Logo Datasheet4U.com

BDW83D - NPN Transistor

General Description

Collector Current -IC= 15A High DC Current Gain-hFE= 750(Min)@ IC= 6A Complement to Type BDW84D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications ABSOL

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BDW83D SILICON POWER TRANSISTOR SavantIC
BDW83D NPN SILICON POWER DARLINGTONS Bourns
BDW83D NPN SILICON POWER DARLINGTONS Comset Semiconductors
BDW83 SILICON POWER TRANSISTOR SavantIC
BDW83 NPN SILICON POWER DARLINGTONS Bourns

Other Datasheets by Inchange Semiconductor

Part Number Description
BDW83 NPN Transistor
BDW83A NPN Transistor
BDW83B NPN Transistor
BDW83C NPN Transistor
BDW84 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)@ IC= 6A ·Complement to Type BDW84D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 3.