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BUR52
HIGH CURRENT NPN SILICON TRANSISTORS
The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal case, Intented for use in switching and linear applications in military and industrial equipment. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO VCBO VEBO IC IB PT TJ TS
Ratings
Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Emitter-Base Voltage (IC = 0) Collector Current Base Current Power Dissipation
Value
250 350 10 IC ICM tp = (10 ms)
@ TC = 25°
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Unit
V V V A A W °C
60 80 16
Junction Temperature
Storage Temperature
350 200 -55 to +200
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
0.5
Unit
°C/W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.
BUR52 Datasheet
