Datasheet Details
| Part number | TIC246C |
|---|---|
| Manufacturer | Comset Semiconductors |
| File Size | 213.38 KB |
| Description | (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| Download | TIC246C Download (PDF) |
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Download the TIC246C datasheet PDF. This datasheet also includes the TIC246B variant, as both parts are published together in a single manufacturer document.
| Part number | TIC246C |
|---|---|
| Manufacturer | Comset Semiconductors |
| File Size | 213.38 KB |
| Description | (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| Download | TIC246C Download (PDF) |
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This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS http://www.DataSheet4U.net/ Symbol VDRM IT(RMS) ITSM IGM TC Tstg TL Ratings B Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak gate current Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds 200 Value C 300 Unit M S N V A A A °C °C °C D 400 E 500 600 700 800 16 125 ±1 -40 to +110 -40 to +125 230 THERMAL CHARACTERISTICS Symbol R∂JC R∂JA Ratings Junction to case thermal resistance Junction to free air thermal resistance COMSET SEMICONDUCTORS Value ≤ 1.9 ≤ 62.5 Unit °C/W 1|3 30/10/2012 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IDRM Ratings Test Condition(s) Min ±1.2 Typ 12 -19 -16 34 0.8 -0.8 -0.8 0.9 22 -22 ±1.4 ±400 ±100 ±9 Max ±2 50 -50 -50 2 -2 -2 2 40 Unit mA IGT VGT IH IL VTM dv/dt di/dt dv/dt© Repetitive peak VD = Rated VDRM, , IG = 0 off-state current TC = 110°C Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Gate trigger current Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Gate trigger voltage Vsupply = -12 V†,
SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • • High current triacs 16 A RMS 70 A Peak Glass Passivated Wafer 200 V to 800 V Off-State.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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TIC246 | SILICON TRIACS | Power Innovations Limited |
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TIC246 | Triac | INCHANGE |
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TIC246D | Triacs | Inchange Semiconductor |
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TIC246D | SILICON TRIACS | Power Innovations Limited |
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TIC246M | Triacs | Inchange Semiconductor |
| Part Number | Description |
|---|---|
| TIC246B | (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC246D | (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC246E | (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC246M | (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC246N | (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC246S | (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC206A | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC206B | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC206D | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC206M | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |