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TIC246M - (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR

This page provides the datasheet information for the TIC246M, a member of the TIC246B (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR family.

Description

This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.

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Datasheet preview – TIC246M

Datasheet Details

Part number TIC246M
Manufacturer Comset Semiconductors
File Size 213.38 KB
Description (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR
Datasheet download datasheet TIC246M Datasheet
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Full PDF Text Transcription

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SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • • High current triacs 16 A RMS 70 A Peak Glass Passivated Wafer 200 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) 125 A peak current Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. ABSOLUTE MAXIMUM RATINGS http://www.DataSheet4U.
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