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C2M0045170D Datasheet Preview

C2M0045170D Datasheet

Silicon Carbide Power MOSFET

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VDS 1700 V
C2M0045170D
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
ID @ 25˚C
72 A
RDS(on) 45 m
N-Channel Enhancement Mode
Features
Package
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Resistant to Latch-Up
Halogen Free, RoHS Compliant
Benefits
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
TO-247-3
Applications
Solar Inverters
Switch Mode Power Supplies
High Voltage DC/DC converters
Motor Drive
Pulsed Power Applications
Part Number
C2M0045170D
Package
TO-247-3
Marking
C2M0045170
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Note
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
ID(pulse) Pulsed Drain Current
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
1700
-10/+25
-5/+20
72
48
160
520
-40 to
+150
V VGS = 0 V, ID = 100 μA
V Absolute maximum values, AC (f >1 Hz)
V Recommended operational values
A VGS =20 V, TC = 25˚C
VGS =20 V, TC = 100˚C
Fig. 19
A Pulse width tP limited by Tjmax
Fig. 22
W TC=25˚C, TJ = 150 ˚C
Fig. 20
˚C
TL Solder Temperature
Md Mounting Torque
260 ˚C 1.6mm (0.063”) from case for 10s
1
8.8
Nm
lbf-in
M3 or 6-32 screw
1 C2M0045170D Rev. -, 06-2016




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C2M0045170D Datasheet Preview

C2M0045170D Datasheet

Silicon Carbide Power MOSFET

No Preview Available !

Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min. Typ.
V(BR)DSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
1700
2.0
2.6
1.8
IDSS
IGSS
RDS(on)
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
gfs Transconductance
2
45
90
21.7
24.4
Ciss Input Capacitance
3672
Coss Output Capacitance
171
Crss Reverse Transfer Capacitance
6.7
Eoss Coss Stored Energy
105
EON Turn-On Switching Energy (SiC Diode FWD)
2.1
EOFF Turn Off Switching Energy (SiC Diode FWD)
0.86
EON Turn-On Switching Energy (Body Diode FWD)
4.7
EOFF Turn Off Switching Energy (Body Diode FWD)
0.93
td(on) Turn-On Delay Time
65
tr Rise Time
20
td(off)
Turn-Off Delay Time
48
tf
RG(int)
Qgs
Qgd
Qg
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
18
1.3
44
57
188
Max.
4
100
600
70
Unit
V
V
V
μA
nA
mΩ
S
Test Conditions
VGS = 0 V, ID = 100 μA
VDS = VGS, ID = 18mA
VDS = VGS, ID = 18mA, TJ = 150 °C
VDS = 1700 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = 20 V, ID = 50 A
VGS = 20 V, ID = 50 A, TJ = 150 °C
VDS= 20 V, IDS= 50 A
VDS= 20 V, IDS= 50 A, TJ = 150 °C
VGS = 0 V
pF VDS = 1000 V
f = 1 MHz
μJ VAC = 25 mV
VDS = 1200 V, VGS = -5/20 V,
mJ ID = 50A, RG(ext) = 2.5Ω, L= 105 μH,
TJ = 150 °C, using SiC Diode as FWD
VDS = 1200 V, VGS = -5/20 V,
mJ ID = 50A, RG(ext) = 2.5Ω, L= 105 μH,
TJ = 150 °C, using MOSFET as FWD
VDD = 1200 V, VGS = -5/20 V
ID = 50 A,
ns RG(ext) = 2.5 Ω, Timing relative to VDS
Inductive load
Ω f = 1 MHz, VAC = 25 mV
VDS = 1200 V, VGS = -5/20 V
nC ID = 50 A
Per IEC60747-8-4 pg 21
Note
Fig. 11
Fig.
4,5,6
Fig. 7
Fig.
17,18
Fig 16
Fig. 26,
29b
Note 2
Fig. 26,
29a
Note 2
Fig. 27,
29
Note 2
Fig. 12
Reverse Diode Characteristics
Symbol Parameter
Typ. Max.
VSD Diode Forward Voltage
4.1
3.6
IS Continuous Diode Forward Current
72
trr Reverse Recovery Time
70
Qrr Reverse Recovery Charge
530
Irrm Peak Reverse Recovery Current
14
Note (1): When using SiC Body Diode the maximum recommended VGS = -5V
Thermal Characteristics
Unit Test Conditions
V VGS = - 5 V, ISD = 25 A
V VGS = - 5 V, ISD = 25 A, TJ = 150 °C
A TC= 25 °C, VGS = - 5 V
ns
VGS = - 5 V, ISD = 50 A , VR = 1200 V
nC dif/dt = 1400 A/µs
A
Note
Fig. 8, 9,
10
Note 1
Note 1
Note 1
Symbol
RθJC
RθJC
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient
Typ.
0.22
Max.
0.24
40
Unit
°C/W
Test Conditions
Note
Fig. 21
2 C2M0045170D Rev. -, 06-2016


Part Number C2M0045170D
Description Silicon Carbide Power MOSFET
Maker Cree
Total Page 10 Pages
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