C2M1000170J Description
C2M1000170J Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode.
C2M1000170J Key Features
- High blocking voltage with low RDS(on) Easy to parallel and simple to drive
- Low parasitic inductance
- Low impedance package
- Separate driver source pin
- Ultra-low drain-gate capacitance
- Halogen-Free, RoHS pliant
- Fast intrinsic diode with low reverse recovery (Qrr)
- Wide creepage (~7mm) between drain and source
- Higher system efficiency
- Smooth switching waveforms