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C2M1000170J - Silicon Carbide Power MOSFET

Cree

The C2M1000170J by Cree is a Silicon Carbide Power MOSFET. Below is the official datasheet preview.

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C2M1000170J Silicon Carbide Power MOSFET by Cree - Datasheet Preview — Official preview page of the C2M1000170J Silicon Carbide Power MOSFET datasheet (Cree).

Datasheet Details

Part number	C2M1000170J
Manufacturer	Cree
File Size	2.24 MB
Description	Silicon Carbide Power MOSFET
Datasheet	C2M1000170J-Cree.pdf
Additional preview pages of the C2M1000170J datasheet.

C2M1000170J Product details

Features

High blocking voltage with low RDS(on) Easy to parallel and simple to drive.
Low parasitic inductance.
Low impedance package.
Separate driver source pin.
Ultra-low drain-gate capacitance.
Halogen-Free, RoHS compliant.
Fast intrinsic diode with low reverse recovery (Qrr).
Wide creepage (~7mm) between drain and source Beneﬁts.
Higher system efﬁciency.
Smooth switching waveforms.

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Published: Mar 15, 2018 |