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C3D08060G Datasheet Preview

C3D08060G Datasheet

Silicon Carbide Schottky Diode

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C3D08060G
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
600-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Automotive Qualified to AEC-Q101
Applications
Switch Mode Power Supplies
Power Factor Correction
- Typical PFC Pout : 800W-1600W
Motor Drives
- Typical Power : 3HP-4HP
Package
VRRM = 600 V
IF (TC=135˚C) = 11 A
Qc = 21 nC
TO-263-2
PIN 1
PIN 2
CASE
Part Number
C3D08060G
Package
TO-263-2
Marking
C3D08060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VRRM
VRSM
VDC
IF
IFRM
IFSM
IFSM
Ptot
TJ , Tstg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
600
600
600
24
11
8
57
36
80
60
220
107
46
-55 to
+175
V
V
V
TC=25˚C
A TC=135˚C
TC=152˚C
A
TC=25˚C, tP = 10 ms, Half Sine Wave, D=0.3
TC=110˚C, tP=10 ms, Half Sine Wave, D=0.3
A
TC=25˚C, tp = 10 mS, Half Sine Wave, D=0.3
TC=110˚C, tP=10 ms, Half Sine Wave, D=0.3
A TC=25˚C, tP = 10 µs, Pulse
W
TC=25˚C
TC=110˚C
˚C
Note
1 C3D08060G Rev. E
Free Datasheet http://www.nDatasheet.com




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C3D08060G Datasheet Preview

C3D08060G Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
1.6 1.8
1.9 2.4
V
10
20
50
200
μA
QC Total Capacitive Charge
21
nC
C Total Capacitance
441
39 pF
33
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
IF = 8 A TJ=25°C
IF = 8 A TJ=175°C
VR = 600 V TJ=25°C
VR = 600 V TJ=175°C
VR = 600 V, IF = 8A
di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Thermal Characteristics
Note
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
1.4
Unit
°C/W
Typical PerformanFcoreward Characteristics
10 10
99
88
77
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
66
55
44
33
22
11
00
00..00 00..55 11..00 11..55 22..00 2.2.55
VF ForwVaF FrodrwVarodlVtoaltgagee ((VV) )
Figure 1. Forward Characteristics
Reverse Characteristics
101000
9090
8080
7070
6060
5050
4040 TJ = 25°C
TJ = 75°C
3030 TJ = 125°C
2020 TJ = 175°C
1010
00
00 110000 202000 303000 404000 550000 660000 770000 808000 909000 10100000
VR RVeRvReervseerseVVoolttaagge e(V)(V)
Figure 2. Reverse Characteristics
2 C3D08060G Rev. E
Free Datasheet http://www.nDatasheet.com


Part Number C3D08060G
Description Silicon Carbide Schottky Diode
Maker Cree
Total Page 6 Pages
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