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C3D10065I Datasheet Preview

C3D10065I Datasheet

Silicon Carbide Schottky Diode

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C3D10065I
Silicon Carbide Schottky Diode
Z-RecRectifier
Features
650-Volt Schottky Rectifier
Ceramic Package provides 2.5kV isolation
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
Positive Temperature Coefficient on VF
Benefits
Electrically Isolated Package
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
HVAC
Switch Mode Power Supplies
Package
VRRM = 650 V
IF (TC=125˚C) = 10 A
Qc = 25 nC
PIN 1
PIN 2
CASE
Part Number
C3D10065I
Package
Isolated TO-220-2
Marking
C3D10065I
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
VRRM
VRSM
VDC
IF
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
IFRM Repetitive Peak Forward Surge Current
IFSM Non-Repetitive Peak Forward Surge Current
Ptot Power Dissipation
TJ
Tstg, Tc
Operating Junction Range
Storage Temperature and Case Temperature
TO-220 Mounting Torque
650
650
650
19
10
8.5
28.6
17.7
80
70
60
26
-55 to
+175
-55 to
+150
1
8.8
V
V
V
A TTTCCC===211523˚55C˚˚CC
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinienepupluslese
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinienepupluslese
W TTCC==2151˚0C˚C
˚C
˚C
Nm
lbf-in
M3 Screw
6-32 Screw
1 C3D10065I Rev. B
Note
Free Datasheet http://www.nDatasheet.com




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C3D10065I Datasheet Preview

C3D10065I Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
1.5 1.8
2.0 2.4
V
IIFF
=
=
10
10
AA TTJJ==2157°5C°C
IR Reverse Current
12 60
24 220
μA
VVRR
=
=
650
650
VV TTJJ==2157°5C°C
QC Total Capacitive Charge
25
nC
VdiR/d=t
650 V,
= 500
IAF/=μs10
A
TJ = 25°C
C Total Capacitance
480
50
42
pF
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC Package Thermal Resistance from Junction to Case
Typ.
2.6
Unit
°C/W
Note
Typical Performance
20
18
16
14
TTTTTJJJJJ=====271-1555275°°55°CC°°CCC
12
10
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3
VF (V)
Figure 1. Forward Characteristics
3.5
12
10
8
6
4
2
TTTTTJJJJJ=====271-1555275°°55°CC°°CCC
0
0 100 200 300 400 500 600 700 800
VVoRltage((VV) )
Figure 2. Reverse Characteristics
2 C3D10065I Rev. B
Free Datasheet http://www.nDatasheet.com


Part Number C3D10065I
Description Silicon Carbide Schottky Diode
Maker Cree
Total Page 6 Pages
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