C3D10065I Datasheet | Wolfspeed

3rd Generation 650 V, 10 A Silicon Carbide Schottky Description With the performance advantages of a Silicon Carbide (Si C) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. Si C diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In bination with the reduced cooling requirements and improved thermal performance of Si C products, Si C diodes are able to provide lower overall system costs in a variety of diverse applications. Package Type: Isolated TO-220-2 Marking: C3D10065I Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo. Features Applications - Low Forward Voltage (VF) Drop with Positive Temperature Coefficient - Zero Reverse Recovery Current / Forward Recovery Voltage - Temperature-Independent Switching Behavior - Electrically Isolated Package (2.5k V) - Industrial Switched Mode Power Supplies - Uninterruptible & AUX Power Supplies - Boost for PFC & DC-DC Stages - Solar Inverters - AC/DC Converters Maximum Ratings (TC = 25°C Unless Otherwise Specified) Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current Non-Repetitive Forward Surge Current Non-Repetitive Peak Forward Surge Current Power Dissipation Diode d V/dt ruggedness i2t value Symbol VRRM VDC IF IFRM IFSM IF,Max Ptot d V/dt ʃi2dt Value 650 650 19 10 9 39 26.5 90 70 860 680 60 26 200 40.5 24.5 Unit Test...