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C3D10060G - Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • IF (TC=135˚C) = 14 A 25 nC Package.
  • 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits TO-263-2.
  • Replace Bipolar with Unipolar Rectifiers Essentially No Switc.

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Datasheet Details

Part number C3D10060G
Manufacturer Cree
File Size 681.46 KB
Description Silicon Carbide Schottky Diode
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C3D10060G ® Silicon Carbide Schottky Diode VRRM = Qc = 600 V Z-Rec Rectifier Features IF (TC=135˚C) = 14 A 25 nC Package • • • • • • • 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits TO-263-2 • • • • • • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Automotive Qualified to AEC-Q101 PIN 1 PIN 2 CASE Applications • • • Switch Mode Power Supplies Power Factor Correction - Typical PFC Pout : 1000W-2000W Motor Drives - Typical
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