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C3M0065090J Datasheet Silicon Carbide Power MOSFET

Manufacturer: Cree (now Wolfspeed)

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Overview

C3M0065090J VDS ID @ 25˚C 900 V 35 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement.

Key Features

  • New C3M SiC MOSFET technology.
  • New low impedance package with driver source pin.
  • High blocking voltage with low On-resistance.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Low output capacitance (60pF).
  • Halogen free, RoHS compliant.
  • Wide creepage (~7mm) between drain and source Benefits.
  • Reduce switching losses and minimize gate ringing.
  • Higher system efficiency.
  • Increase power density.
  • I.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Wolfspeed Logo C3M0065090J Silicon Carbide Power MOSFET Wolfspeed
Wolfspeed Logo C3M0065090D Silicon Carbide Power MOSFET Wolfspeed

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