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C3M0065090J
Silicon Carbide Power MOSFET C3MTM MOSFET Technology
N-Channel Enhancement Mode TAB Drain
Drain
Features
(TAB)
• New C3M Silicon Carbide (SiC) MOSFET technology • New low impedance package with driver source pin • High blocking voltage with low On-resistance • Fast intrinsic diode with low reverse recovery (Qrr) • Low output capacitance (60pF) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source
1 2 34 5 6 7 G DS S S S S S
Part Number
Gate (Pin 1)
Driver Source (Pin 2)
Power Source (Pin 3,4,5,6,7)
Package
Marking
C3M0065090J
TO 263-7
C3M0065090J
Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.