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C3M0065090J - Silicon Carbide Power MOSFET

Key Features

  • (TAB).
  • New C3M Silicon Carbide (SiC) MOSFET technology.
  • New low impedance package with driver source pin.
  • High blocking voltage with low On-resistance.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Low output capacitance (60pF).
  • Halogen free, RoHS compliant.
  • Wide creepage (~7mm) between drain and source 1 2 34 5 6 7 G DS S S S S S Part Number Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package Marki.

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C3M0065090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain Features (TAB) • New C3M Silicon Carbide (SiC) MOSFET technology • New low impedance package with driver source pin • High blocking voltage with low On-resistance • Fast intrinsic diode with low reverse recovery (Qrr) • Low output capacitance (60pF) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source 1 2 34 5 6 7 G DS S S S S S Part Number Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package Marking C3M0065090J TO 263-7 C3M0065090J Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.