C3M0065090J Description
C3M0065090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain.
C3M0065090J Key Features
- New C3M Silicon Carbide (SiC) MOSFET technology
- New low impedance package with driver source pin
- High blocking voltage with low On-resistance
- Fast intrinsic diode with low reverse recovery (Qrr)
- Low output capacitance (60pF)
- Halogen free, RoHS pliant
- Wide creepage (~7mm) between drain and source