C3M0065090J
C3M0065090J is Silicon Carbide Power MOSFET manufactured by Cree.
VDS ID @ 25˚C
900 V 35 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
65 mΩ
N-Channel Enhancement Mode
Features
- New C3M SiC MOSFET technology
- New low impedance package with driver source pin
- High blocking voltage with low On-resistance
- Fast intrinsic diode with low reverse recovery (Qrr)
- Low output capacitance (60pF)
- Halogen free, RoHS pliant
- Wide creepage (~7mm) between drain and source Benefits
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Increase power density
- Increase system switching frequency Applications
- Renewable energy
- EV battery chargers
- High voltage DC/DC converters
-...
