C3M0065090J Description
C3M0065090J VDS ID @ 25˚C 900 V 35 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode.
C3M0065090J Key Features
- New C3M SiC MOSFET technology
- New low impedance package with driver source pin
- High blocking voltage with low On-resistance
- Fast intrinsic diode with low reverse recovery (Qrr)
- Low output capacitance (60pF)
- Halogen free, RoHS pliant
- Wide creepage (~7mm) between drain and source Benefits
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Increase power density