The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
VDS
900 V
C3M0065090D
ID @ 25˚C
36 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
65 mΩ
N-Channel Enhancement Mode
Features
Package
• C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant
Benefits
• Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency
Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch Mode Power Supplies
Part Number C3M0065090D
Package TO-247-3
Marking C3M0065090
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax VGSmax VGSop
Drain
C3M0065090D Datasheet
