C3M0065090D Description
VDS 900 V C3M0065090D ID @ 25˚C 36 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode.
C3M0065090D Key Features
- C3M SiC MOSFET technology
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency