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C3M0120090J Datasheet Silicon Carbide Power MOSFET

Manufacturer: Cree (now Wolfspeed)

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Overview

C3M0120090J VDS ID @ 25˚C 900 V 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement.

Key Features

  • New C3M SiC MOSFET technology.
  • High blocking voltage with low On-resistance.
  • High speed switching with low capacitances.
  • New low impedance package with driver source.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant.
  • Wide creepage (~7mm) between drain and source Benefits.
  • Higher system efficiency.
  • Reduced cooling requirements.
  • Increased power density.
  • Increased sy.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Wolfspeed Logo C3M0120090J Silicon Carbide Power MOSFET Wolfspeed
Wolfspeed Logo C3M0120090D Silicon Carbide Power MOSFET Wolfspeed

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