CGH35030F hemt equivalent, gan hemt.
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2007 Rev 1.4
– May
3.3 - 3.9 GHz Operation >11 dB Small Signal Gain 2.0 % EVM at 4 W POUT 23 % Efficiency at 4 W POUT 3.7˚C/W Typ.
The transistor is supplied in a ceramic/metal flange package. www.DataSheet4U.com
Package Type : 440166 PN: CGH3503 0F.
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