| Part Number | CGH35030F Datasheet |
|---|---|
| Manufacturer | Cree |
| Overview |
RES,1/16W,0603,1%,100 OHMS RES,1/16W,0603,1%,47 OHMS CAP, 470PF, 10%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 0.8pF, +/-.
* * * * 2007 Rev 1.4 * May 3.3 - 3.9 GHz Operation >11 dB Small Signal Gain 2.0 % EVM at 4 W POUT 23 % Efficiency at 4 W POUT 3.7˚C/W Typical thermal resistance under 4.0 W PAVE OFDM WiMAX Fixed Access 802.16-2004 OFDM * * Subject to change without notice. Absolute Maxim. |
CGH35030F Datasheet and Specifications PDF
The CGH35030F is a GaN HEMT.
| Part Number | CGH35030F Datasheet |
|---|---|
| Description | GaN HEMT |
| Manufacturer | Wolfspeed |
| Overview |
Wolfspeed’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030.
* 3.3 - 3.9 GHz Operation * 30 W Peak Power Capability * 12 dB Small Signal Gain * 4.0 W PAVE < 2.0% EVM * 25% Efficiency at 4 W PAVE * WiMAX Fixed Access 802.16-2004 OFDM * WiMAX Mobile Access 802.16e OFDMA Large Signal Models Available for ADS and MWO Rev. 4.2, 2022-10-28 4600 Silicon Drive | . |