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CGH35030F - GaN HEMT

General Description

Wolfspeed’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.3-3.9 GHz WiMAX and BWA amplifier applications.

Key Features

  • 3.3 - 3.9 GHz Operation.
  • 30 W Peak Power Capability.
  • 12 dB Small Signal Gain.
  • 4.0 W PAVE < 2.0% EVM.
  • 25% Efficiency at 4 W PAVE.
  • WiMAX Fixed Access 802.16-2004 OFDM.
  • WiMAX Mobile Access 802.16e OFDMA Large Signal Models Available for ADS and MWO Rev. 4.2, 2022-10-28 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed  and the Wolfstreak logo are registered trademark.

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CGH35030F 30 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX Description Wolfspeed’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.3-3.9 GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Types: 440166 PN: CGH35030F Typical Performance Over 3.3-3.8 GHz (TC = 25ºC) of Demonstration Amplifier Parameter Small Signal Gain EVM at PAVE = 23 dBm EVM at PAVE = 36 dBm Drain Efficiency @ 36 dBm Input Return Loss 3.3 GHz 11.6 2.42 1.97 20.8 12.3 3.4 GHz 11.8 2.26 1.74 21.9 8.5 3.5 GHz 11.8 2.09 1.68 23.5 6.1 3.6 GHz 12.0 2.11 1.79 25.4 5.4 3.7 GHz 12.4 2.13 2.01 27.4 6.1 3.8 GHz 13.0 2.