Datasheet Details
| Part number | CGH35030F |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 2.34 MB |
| Description | GaN HEMT |
| Datasheet | CGH35030F-Wolfspeed.pdf |
|
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Overview: CGH35030F 30 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX.
| Part number | CGH35030F |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 2.34 MB |
| Description | GaN HEMT |
| Datasheet | CGH35030F-Wolfspeed.pdf |
|
|
|
Wolfspeed’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.3-3.9 GHz WiMAX and BWA amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
Package Types: 440166 PN: CGH35030F Typical Performance Over 3.3-3.8 GHz (TC = 25ºC) of Demonstration Amplifier Parameter Small Signal Gain EVM at PAVE = 23 dBm EVM at PAVE = 36 dBm Drain Efficiency @ 36 dBm Input Return Loss 3.3 GHz 11.6 2.42 1.97 20.8 12.3 3.4 GHz 11.8 2.26 1.74 21.9 8.5 3.5 GHz 11.8 2.09 1.68 23.5 6.1 3.6 GHz 12.0 2.11 1.79 25.4 5.4 3.7 GHz 12.4 2.13 2.01 27.4 6.1 3.8 GHz 13.0 2.38 2.37 29.1 9.0 Units dB % % % dB Note: Measured in the CGH35030F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01% Probability on CCDF.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
CGH35030F | GaN HEMT | Cree |
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