CGH35240F hemt equivalent, gan hemt.
* 3.1 - 3.5 GHz Operation
* 240 W Typical Output Power
* 11.6 dB Power Gain at PIN = 42.0 dBm
* 57 % Typical Power Added Efficiency
* 50 Ohm Inte.
The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: 3454204200F1
Typical Performance Ove.
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