CGH40025
CGH40025 is RF Power GaN HEMT manufactured by Cree.
25 W, RF Power GaN HEMT
Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and pressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, pill packages.
PPacNk:aCgGeHT4y0p0e2: 454P0a1n9d6CaGndH4404002156F6
Features
- Up to 6 GHz Operation
- 15 dB Small Signal Gain at 2.0 GHz
- 13 dB Small Signal Gain at 4.0 GHz
- 30 W typical PSAT
- 62...
