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CGH40025 - RF Power GaN HEMT

General Description

The CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • Up to 6 GHz Operation.
  • 15 dB Small Signal Gain at 2.0 GHz.
  • 13 dB Small Signal Gain at 4.0 GHz.
  • 30 W typical PSAT.
  • 62% Efficiency at PSAT.
  • 28 V Operation.

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CGH40025 25 W, RF Power GaN HEMT Description The CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, pill package. Package Types: 440196 & 440166 PN: CGH40025P & CGH40025F Features • Up to 6 GHz Operation • 15 dB Small Signal Gain at 2.0 GHz • 13 dB Small Signal Gain at 4.