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CGH40025 - RF Power GaN HEMT

General Description

RES,1/16W,0603,1%,47 OHMS RES,1/16W,0603,1%,100 OHMS CAP, 470PF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 0.8pF, +/-0.1pF, 0603 CAP, 0.5pF, +/-0.05pF, 0603 CAP, 1.0pF, +/-0.1pF, 0603 CAP, 10.0pF,+/-5%, 0603 CAP, 39pF,

Key Features

  • Up to 6 GHz Operation.
  • 15 dB Small Signal Gain at 2.0 GHz.
  • 13 dB Small Signal Gain at 4.0 GHz.
  • 30 W typical PSAT.
  • 62 % Efficiency at PSAT.
  • 28 V Operation.

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Other Datasheets by Cree (now Wolfspeed)

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CGH40025F GaN HEMT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, pill packages. PPacNk:aCgGeHT4y0p0e2: 454P0a1n9d6CaGndH4404002156F6 FEATURES • Up to 6 GHz Operation • 15 dB Small Signal Gain at 2.0 GHz • 13 dB Small Signal Gain at 4.