CGH40025
CGH40025 is RF Power GaN HEMT manufactured by Cree.
FEATURES
- Up to 6 GHz Operation
- 15 d B Small Signal Gain at 2.0 GHz
- 13 d B Small Signal Gain at 4.0 GHz
- 30 W typical PSAT
- 62 % Efficiency at PSAT
- 28 V Operation
APPLICATIONS
- 2-Way Private Radio
- Broadband Amplifiers
- Cellular Infrastructure
- Test Instrumentation
- Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Rev 4.0
- May 2015
Subject to change without notice. .cree./wireless
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque
VDSS VGS TSTG TJ IGMAX IDMAX TS
τ
84 -10, +2 -65, +150
225 7.0 3 245 60
Thermal Resistance, Junction to Case3
RθJC
Case Operating Temperature3,4
TC -40, +150
Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at ,cree./RF/Document-Library 3 Measured for the CGH40025F at PDISS = 28 W. 4 See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC = 25˚C)
Characteristics DC Characteristics1
Symbol
Min.
Gate Threshold Voltage
VGS(th)
-3.8...
