Datasheet4U Logo Datasheet4U.com

CGH40025 Datasheet Rf Power Gan Hemt

Manufacturer: Cree (now Wolfspeed)

Overview: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and pressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, pill packages.

Key Features

  • Up to 6 GHz Operation.
  • 15 dB Small Signal Gain at 2.0 GHz.
  • 13 dB Small Signal Gain at 4.0 GHz.
  • 30 W typical PSAT.
  • 62 % Efficiency at PSAT.
  • 28 V Operation.

CGH40025 Distributor