CGH40025 - RF Power GaN HEMT

Datasheet Summary

Description

RES,1/16W,0603,1%,47 OHMS RES,1/16W,0603,1%,100 OHMS CAP, 470PF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 0.8pF, +/-0.1pF, 0603 CAP, 0.5pF, +/-0.05pF, 0603 CAP, 1.0pF, +/-0.1pF, 0603 CAP, 10.0pF,+/-5%, 0603 CAP, 39pF,

Features

Up to 6 GHz Operation.
15 dB Small Signal Gain at 2.0 GHz.
13 dB Small Signal Gain at 4.0 GHz.
30 W typical PSAT.
62 % Efficiency at PSAT.
28 V Operation.

Cree

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Datasheet Details

Part number	CGH40025
Manufacturer	Cree
File Size	1.22 MB
Description	RF Power GaN HEMT
Datasheet	CGH40025 Datasheet
Additional preview pages of the CGH40025 datasheet.

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Full PDF Text Transcription

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CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, pill packages. PPacNk:aCgGeHT4y0p0e2: 454P0a1n9d6CaGndH4404002156F6 FEATURES • Up to 6 GHz Operation • 15 dB Small Signal Gain at 2.0 GHz • 13 dB Small Signal Gain at 4.

Published: Apr 19, 2016 |