CGH40025F Datasheet | Cree

FEATURES - - - - - - Up to 4 GHz Operation 16 d B Small Signal Gain at 2.0 GHz 13 d B Small Signal Gain at 4.0 GHz 30 W typical P3d B 62 % Efficiency at P3d B 28 V Operation APPLICATIONS - - - - - 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms 2007 Rev 1.0 - May Subject to change without notice. .cree./wireless Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Soldering Temperature Thermal Resistance, Junction to Case 1 Symbol VDSS VGS TSTG TJ IGMAX TS RθJC Rating 84 -10, +2 -55, +150 175 4.0 245 3.8 Units Volts Volts ˚C ˚C m A ˚C ˚C/W .. Note: Measured for the CGH40025F at PDISS = 28 W. Electrical Characteristics (TC = 25˚C) Characteristics DC Characteristics2 Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current Drain-Source Breakdown Voltage Case Operating Temperature Screw Torque VGS(th) VGS(Q) IDS VBR TC T -3.0 - 4.8 84 -10 - -2.5 -2.0 5.4 100 - - -1.8 - - - +65 60 VDC VDC A VDC ˚C in-oz Reference 440166 Package Revision 3 VDS = 10 V, ID = 7.2 m A VDS = 28 V, ID = 250 m A VDS = 6.0 V, VGS = 2.0 V VGS = -8 V, ID = 7.2 m A Symbol Min. Typ. Max. Units Conditions RF Characteristics (TC = 25˚C, F0 = 3.7 GHz unless otherwise noted) Small Signal Gain Power Output at 3 d B pression Drain Efficiency1 Output Mismatch Stress Dynamic Characteristics Input Capacitance Output Capacitance Feedback Capacitance CGS CDS CGD - - - 9.3 2.0 0.9 - - - p F p F p F VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz GSS P3d B η - - - - 13 30 62 TBD - - - - d B W % Y VDD = 28 V, IDQ = 250 m A VDD = 28 V, IDQ = 250 m A VDD = 28 V, IDQ = 250 m A, P3d B No damage at all phase angles, VDD = 28 V, IDQ = 250 m A, POUT = 12 W...