Datasheet4U Logo Datasheet4U.com

CGH40025F Datasheet Gan Hemt

Manufacturer: Cree (now Wolfspeed)

Overview: PRELIMINARY CGH40025F 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifier circuits. www.DataSheet4U.com The transistor is available in a screw-down, flange package.

Key Features

  • Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 13 dB Small Signal Gain at 4.0 GHz 30 W typical P3dB 62 % Efficiency at P3dB 28 V Operation.

CGH40025F Distributor