CGH55015F1 hemt equivalent, gan hemt.
* 5.5 - 5.8 GHz Operation
* 15 W Peak Power Capability
* >10.5 dB Small Signal Gain
* 2 W PAVE < 2.0 % EVM
* 25 % Efficiency at 2 W Average Power.
The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external ma.
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