Datasheet Summary
PRELIMINARY
15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX and BWA amplifier applications. The transistor is available in ceramic, metal flange package. ..
Package Type : 440166 PN: CGH2701 5F
Typical Performance 2.4-2.7 GHz
Parameter Small Signal Gain POUT @ 2.0 % EVM Drain Efficiency @ 2.0 % EVM Input Return Loss Output Return Loss 2.4 GHz 14.5 34.0 23.0 7.0 5.0
(TC = 25˚C)
2.5 GHz 14.5 34.0 24.0 6.0 6.0 2.6 GHz 14.5 34.0 24.0 5.0 7.0 2.7 GHz...
