Overview: PRELIMINARY
CGH27015F
15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX and BWA amplifier applications. The transistor is available in ceramic, metal flange package. www.DataSheet4U.com Package Type : 440166 PN: CGH2701 5F Typical Performance 2.4-2.7 GHz
Parameter Small Signal Gain POUT @ 2.0 % EVM Drain Efficiency @ 2.0 % EVM Input Return Loss Output Return Loss 2.4 GHz 14.5 34.0 23.0 7.0 5.0 (TC = 25˚C)
2.5 GHz 14.5 34.0 24.0 6.0 6.0 2.6 GHz 14.5 34.0 24.0 5.0 7.0 2.7 GHz 14.5 34.0 23.0 5.0 7.0 Units dB dBm % dB dB Note: Measured in the CGH27015F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
