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CGH27015 - GaN HEMT

General Description

Wolfspeed's CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9 GHz WiMAX and BWA amplifier applications.

Key Features

  • VHF - 3.0 GHz Operation.
  • 15 W Peak Power Capability.
  • 14.5 dB Small Signal Gain.
  • 2 W PAVE < 2.0% EVM.
  • 28% Efficiency at 2 W Average Power.
  • Designed for WiMAX Fixed Access 802.16-2004 OFDM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGH27015 15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Description Wolfspeed's CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9 GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both screw-down, flange and solder-down, pill packages. Package Types: 440166 and 440196 PNs: CGH27015F and CGH27015P Typical Performance Over 2.3-2.7 GHz (TC = 25˚C) Parameter Small Signal Gain EVM at PAVE = 33 dBm Drain Efficiency at PAVE = 33 dBm 2.3 GHz 16.9 1.69 27.1 2.4 GHz 16.0 1.51 27.8 2.5 GHz 15.1 1.50 28.4 2.6 GHz 14.6 1.66 28.0 2.7 GHz 14.3 1.93 28.