CGH55030F1 hemt equivalent, gan hemt.
* 300 MHz Instantaneous Bandwidth
* 30 W Peak Power Capability
* 10 dB Small Signal Gain
* 4 W PAVE < 2.0 % EVM
* 25 % Efficiency at 4 W Average .
The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external ma.
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