CGH55030F1 - GaN HEMT

Wolfspeed

General Description

Wolfspeed's CGH55030F1/P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications.

Key Features

300 MHz Instantaneous Bandwidth.
30 W Peak Power Capability.
10 dB Small Signal Gain.
4 W PAVE < 2.0% EVM.
25% Efficiency at 4 W Average Power.

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CGH55030F1 gan hemt by Wolfspeed - Datasheet Preview

Datasheet Details

Part number	CGH55030F1
Manufacturer	Wolfspeed
File Size	1.62 MB
Description	GaN HEMT
Datasheet	CGH55030F1 Datasheet

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Full PDF Text Transcription (Reference)

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CGH55030F1/P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Description Wolfspeed's CGH55030F1/P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F1/P1 is suitable for 4.9 - 5.5 GHz applications as well. Package Types: 440196 & 440166 PN: CGH55030P1 & CGH55030F1 Typical Performance Over 5.5-5.