| Part Number | CGH55030F1 Datasheet |
|---|---|
| Manufacturer | Cree |
| Overview |
RES, 1/16W, 0603, 1%, 562 OHMS RES, 1/16W, 0603, 1%, 22.6 OHMS CAP, 0.3pF, +/-0.05pF, 0402, ATC600L CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 0.4pF, +/-0.05pF.
* 300 MHz Instantaneous Bandwidth * 30 W Peak Power Capability * 10 dB Small Signal Gain * 4 W PAVE < 2.0 % EVM * 25 % Efficiency at 4 W Average Power * Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications * Designed for Multi-carrier DOCSIS Applications Rev 4.0 * May 2015 Subject . |
CGH55030F1 Datasheet and Specifications PDF
The CGH55030F1 is a GaN HEMT.
Key Specifications
| Part Number | CGH55030F1 Datasheet |
|---|---|
| Description | GaN HEMT |
| Manufacturer | Wolfspeed |
| Overview |
Wolfspeed's CGH55030F1/P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH5.
* 300 MHz Instantaneous Bandwidth * 30 W Peak Power Capability * 10 dB Small Signal Gain * 4 W PAVE < 2.0% EVM * 25% Efficiency at 4 W Average Power Applications * Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications * Designed for Multi-carrier DOCSIS Applications Large Signal Models Ava. |