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CGHV14250 - GaN HEMT

Description

R1 RES, 1/16W, 0603, 1%, 562 OHMS R2 R3 L1 C1, C23 RES, 5.1 OHM, +/-1%, 1/16W, 0603 RES, 1/16W, 0603, 1%, 4700 OHMS INDUCTOR, CHIP, 6.8 nH, 0603 SMT CAP, 27pF, +/- 5%, 250V, 0805, ATC 600F C2 CAP, 2.0pF, +/- 0.1pF, 0603, ATC C3, C4 CAP, 0.5pF, +/-0.05pF, 0805, ATC 600F C5,C6 CAP, 1.0pF, +/-0

Features

  • Reference design amplifier 1.2 - 1.4 GHz Operation.
  • FET Tuning range UHF through 1800 MHz.
  • 330 W Typical Output Power.
  • 18 dB Power Gain.
  • 77% Typical Drain Efficiency.

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Datasheet Details

Part number CGHV14250
Manufacturer Cree
File Size 722.26 KB
Description GaN HEMT
Datasheet download datasheet CGHV14250 Datasheet
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Full PDF Text Transcription

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CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from UHF through 1800 MHz. The package options are ceramic/metal flange and pill package. Package Type:P4N4:0C1G62H,V41440215601 Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz Output Power 365 365 350 310 1.4 GHz 330 Gain 18.6 18.6 18.4 17.9 18.
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