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CGHV14250 - GaN HEMT

General Description

Wolfspeed’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for DC - 1.6 GHz L-Band radar amplifier applications.

Key Features

  • Reference design amplifier 1.2 - 1.4 GHz Operation.
  • FET Tuning range UHF through 1800 MHz.
  • 330 W Typical Output Power.
  • 18 dB Power Gain.
  • 77 % Typical Drain Efficiency.
  • < 0.3 dB Pulsed Amplitude Droop.
  • Internally pre-matched on input, unmatched output Large Signal Models Available for ADS and MWO Rev. 3.0, 2022-9-30 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV14250 250 W, DC - 1.6 GHz, GaN HEMT for L-Band Radar Systems Description Wolfspeed’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for DC - 1.6 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 0.9 through 1.8 GHz. The package options are ceramic/metal flange and pill package. Package Types: 440162, 440161 PN: CGHV14250F, CGHV14250P Typical Performance Over 1.2 - 1.4 GHz (TC = 25ºC) of Demonstration Amplifier Parameter Outdoor Power Gain Drain Efficiency 1.2 GHz 365 18.6 80 1.25 GHz 365 18.6 80 1.3 GHz 350 18.4 77 1.35 GHz 310 17.