Overview: CGHV14250
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from UHF through 1800 MHz. The package options are ceramic/metal flange and pill package. Package Type:P4N4:0C1G62H,V41440215601 Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz Output Power 365 365 350 310 1.4 GHz 330 Gain 18.6 18.6 18.4 17.9 18.2 Drain Efficiency 80 80 77 74 76 Note: Measured in the CGHV14250-AMP amplifier circuit, under 500 μs pulse width, 10% duty cycle, PIN = 37 dBm.
