Datasheet Summary
250 W, 1200
- 1400 MHz, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2
- 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from UHF through 1800 MHz. The package options are ceramic/metal flange and pill package.
Package Type:P4N4:0C1G62H,V41440215601
Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.2 GHz
1.25 GHz
1.3 GHz
1.35 GHz
Output Power
365 365 350 310
1.4 GHz...
