CGHV14800F
CGHV14800F is GaN HEMT manufactured by Cree.
800 W, 1200
- 1400 MHz, 50 V, Ga N HEMT for L-Band Radar Systems
Cree’s CGHV14800 is a gallium nitride (Ga N) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800 ideal for 1.2
- 1.4 GHz pulsed L-Band radar amplifier applications, such as air traffic control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range survelliance radars. The Ga N HEMT typically operates at 50 V, typically delivering >65% drain efficiency. The package options are ceramic/metal flange package.
Package PN:
CTGyp He V: 1444800101F7
Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.2 GHz
1.25 GHz
1.3 GHz
1.35 GHz
Output Power
1.4 GHz 910
Power Gain
Drain Efficiency
74 73 73 69 67
Note: Measured in the CGHV14800-AMP amplifier circuit, under 100 μs pulse width, 5% duty cycle, PIN = 44.5 d Bm.
Units W d B %
Features
- Reference design amplifier 1.2
- 1.4 GHz Operation
- 910 W Typical Output Power
- 14 d B Power Gain
- 70% Typical Drain Efficiency
- <0.3 d B Pulsed Amplitude Droop
- Internally input and output matched
Rev 2.0
- June 2017
Subject to change without notice....
