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CGHV14800F1 - 800W GaN Transistor

General Description

Wolfspeed’s CGHV14800F1 is an 800W packaged, partially-matched transistor utilizing Wolfspeed’s high performance, 0.4um GaN on SiC production process.

The CGHV14800F1 operates up to 1.4 GHz and supports both defense and commercial-related avionics and radar applications.

Key Features

  • Psat: 800 W.
  • DE: 65 %.
  • LSG: 14 dB.
  • S21: 18 dB.
  • S11: -12 dB.
  • S22: -5 dB.
  • Long pulse operation Note: Features are typical performance via a 1.2-1.4 GHz reference design under 25C, pulsed operation (CGHV14800F1-AMP). Please reference performance charts for additional information.

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CGHV14800F1 DC-1.4 GHz, 800 W GaN Transistor Description Wolfspeed’s CGHV14800F1 is an 800W packaged, partially-matched transistor utilizing Wolfspeed’s high performance, 0.4um GaN on SiC production process. The CGHV14800F1 operates up to 1.4 GHz and supports both defense and commercial-related avionics and radar applications. The CGHV14800F1 typically achieves 800 W of saturated output power with 14 dB of large signal gain and 65% drain efficiency via a 1.2-1.4 GHz reference design. Packaged in a thermally-enhanced, flange package, the CGHV14800F1 provides superior performance under long pulse operation allowing customers to improve SWaP-C benchmarks in their next-generation systems. Figure 1. CGHV14800F1 Figure 2.