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CGHV14800F - GaN HEMT

Key Features

  • Reference design amplifier 1.2 - 1.4 GHz Operation.
  • 910 W Typical Output Power.
  • 14 dB Power Gain.
  • 70% Typical Drain Efficiency.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV14800F 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800 ideal for 1.2 - 1.4 GHz pulsed L-Band radar amplifier applications, such as air traffic control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range survelliance radars. The GaN HEMT typically operates at 50 V, typically delivering >65% drain efficiency. The package options are ceramic/metal flange package. Package PN: CTGypHeV: 1444800101F7 Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.