CGHV1J006D datasheet by Cree (now Wolfspeed).
| Part number | CGHV1J006D |
|---|---|
| Datasheet | CGHV1J006D-Cree.pdf |
| File Size | 461.32 KB |
| Manufacturer | Cree (now Wolfspeed) |
| Description | GaN HEMT Die |
|
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CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency.
View CGHV1J006D datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
CGHV1J006D | GaN HEMT Die | Wolfspeed |
View all Cree (now Wolfspeed) datasheets
| Part Number | Description |
|---|---|
| CGHV1J070D | GaN HEMT Die |
| CGHV14250 | GaN HEMT |
| CGHV14500 | GaN HEMT |
| CGHV14800 | GaN HEMT |
| CGHV14800F | GaN HEMT |
| CGHV1F006S | GaN HEMT |
| CGHV1F025S | GaN HEMT |
| CGHV22100 | GaN HEMT |
| CGHV22200 | GaN HEMT |
| CGHV27015S | GaN HEMT |
