CGHV1J006D
CGHV1J006D is GaN HEMT Die manufactured by Cree.
6 W, 18.0 GHz, GaN HEMT Die
Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency Features
. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J006D
Features
- 17 dB Typ. Small Signal Gain at 10 GHz
- 60% Typ. PAE at 10 GHz
- 6 W Typical Psat
- 40 V Operation
- Up to 18GHz Operation
APPLICATIONS
- Satellite munications
- PTP munications Links
- Marine Radar
- Pleasure Craft Radar
- Port Vessel...
