Overview: CGHV40100
100 W, DC - 3.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40100 ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange and pill package. PPNac: CkaGgHeVT4y0p1e0s0: F44&0C19G3H&V4404100200P6 Typical Performance Over 500 MHz - 2.5 GHz (TC = 25˚C), 50 V Parameter 500 MHz 1.0 GHz 1.5 GHz Small Signal Gain 17.6 16.9 17.7 Saturated Output Power 147 100 141 Drain Efficiency @ PSAT 68 56 Input Return Loss 6 5.1 Note: Measured CW in the CGHV40100F-AMP application circuit. 58 10.5 2.0 GHz 17.5 116 54 5.5 2.5 GHz 14.8 112 54 8.
