Part number:
CGHV40100
Manufacturer:
Cree
File Size:
1.48 MB
Description:
Gan hemt.
CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG.
* Up to 3 GHz Operation
* 100 W Typical Output Power
* 17.5 dB Small Signal Gain at 2.0 GHz
* Application Circuit for 0.5 - 2.5 GHz
* 55% Efficiency at PSAT
* 50 V Operation Large Signal Models Available for ADS & MWO Subject to change without
CGHV40100
Cree
1.48 MB
Gan hemt.
CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG.
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