CGHV40100
CGHV40100 is 100W GaN HEMT manufactured by MACOM Technology Solutions.
100 W, DC
- 3.0 GHz, 50 V, GaN HEMT
Description
The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40100 ideal for linear and pressed amplifier circuits. The transistor is available in a 2-lead flange and pill package.
Features
- Up to 3 GHz Operation
- 100 W Typical Output Power
- 17.5 dB Small Signal Gain at 2.0 GHz
- Application Circuit for 0.5
- 2.5 GHz
- 55% Efficiency at PSAT
- 50 V Operation
Package...
