Datasheet4U Logo Datasheet4U.com

CGHV40100 - 100W GaN HEMT

General Description

The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • Up to 3 GHz Operation.
  • 100 W Typical Output Power.
  • 17.5 dB Small Signal Gain at 2.0 GHz.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CGHV40100 GaN HEMT Cree
CGHV40100 GaN HEMT Wolfspeed
CGHV40180F GaN HEMT Cree
CGHV40030 GaN HEMT Cree
CGHV40030 GaN HEMT Wolfspeed

Other Datasheets by MACOM Technology Solutions

Part Number Description
CGHV40180F GaN HEMT
CGHV40180P 18W GaN HEMT
CGHV40030 GaN HEMT
CGHV40050 GaN HEMT
CGHV40200PP GaN HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40100 ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange and pill package. Features • Up to 3 GHz Operation • 100 W Typical Output Power • 17.5 dB Small Signal Gain at 2.0 GHz • Application Circuit for 0.5 - 2.5 GHz • 55% Efficiency at PSAT • 50 V Operation Package Types: 440193 & 440206 PN: CGHV40100F & CGHV40100P Typical Performance Over 500 MHz - 2.