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CGHV40100 - GaN HEMT

Key Features

  • Up to 3 GHz Operation.
  • 100 W Typical Output Power.
  • 17.5 dB Small Signal Gain at 2.0 GHz.

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📁 Similar Datasheet

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Other Datasheets by Cree (now Wolfspeed)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40100 ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange and pill package. PPNac: CkaGgHeVT4y0p1e0s0: F44&0C19G3H&V4404100200P6 Typical Performance Over 500 MHz - 2.5 GHz (TC = 25˚C), 50 V Parameter 500 MHz 1.0 GHz 1.5 GHz Small Signal Gain 17.6 16.9 17.7 Saturated Output Power 147 100 141 Drain Efficiency @ PSAT 68 56 Input Return Loss 6 5.