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CGHV59070 Datasheet RF Power GaN HEMT

Manufacturer: Cree (now Wolfspeed)

Overview

PRELIMINARY CGHV59070 70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT Cree’s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed amplifier circuits.

Key Features

  • 4.4 - 5.9 GHz.