Overview: PRELIMINARY
CGHV59070
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT Cree’s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package. PNP’sa: cCkGaHgeV5T9y0p7e:04F,4C0G22H4V,5494007107P0 Typical Performance Over 4.8 - 5.9 GHz (TC = 25˚C) Parameter 4.8 GHz 5.0 GHz 5.2 GHz 5.4 GHz 5.6 GHz Power Gain at 50 V 13.7 14.2 14.5 14.6 14.3 Output Power at 50 V 84 93 101 102 95 Drain Efficiency at 50 V 55 56 57 56 54 Note: Measured in CGHV59070F-AMP (838269) under 100 µS pulse width,10% duty, Pin = 35.5 dBm (3.5 W) 5.8 GHz 13.7 84 50 5.9 GHz 13.
