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CGHV59070 Datasheet Rf Power Gan Hemt

Manufacturer: Wolfspeed

Overview: CGHV59070 70 W, 4.4 - 5.9 GHz, 50 V, RF Power GaN HEMT.

General Description

Wolfspeed's CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

The good efficiency, high gain and wide bandwidth capabilities make the CGHV59070 ideal for linear applications such as wireless infrastructure and for pressed amplifier circuits.

Key Features

  • 4.4 - 5.9 GHz Operation.
  • 90 W POUT typical at 50 V.
  • 14 dB Power Gain.
  • 55% Drain Efficiency.
  • Internally Matched.

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