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CGHV59070 - RF Power GaN HEMT

General Description

Wolfspeed's CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • 4.4 - 5.9 GHz Operation.
  • 90 W POUT typical at 50 V.
  • 14 dB Power Gain.
  • 55% Drain Efficiency.
  • Internally Matched.

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Full PDF Text Transcription (Reference)

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CGHV59070 70 W, 4.4 - 5.9 GHz, 50 V, RF Power GaN HEMT Description Wolfspeed's CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. The good efficiency, high gain and wide bandwidth capabilities make the CGHV59070 ideal for linear applications such as wireless infrastructure and for compressed amplifier circuits. The transistor is available in a flange and pill package. Package Type: 440224, 440170 PN’s: CGHV59070F, CGHV59070P Features • 4.4 - 5.