CGHV59070
CGHV59070 is RF Power GaN HEMT manufactured by Cree.
PRELIMINARY
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT
Cree’s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor
(HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and pressed amplifier circuits. The transistor is available in a flange and pill package.
PNP’sa: cCkGaHgeV5T9y0p7e:04F,4C0G22H4V,5494007107P0
Typical Performance Over 4.8
- 5.9 GHz (TC = 25˚C)
Parameter
4.8 GHz 5.0 GHz 5.2 GHz 5.4 GHz 5.6 GHz
Power Gain at 50...
