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CGHV59070 - RF Power GaN HEMT

Key Features

  • 4.4 - 5.9 GHz.

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📁 Similar Datasheet

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CGHV59070 RF Power GaN HEMT Wolfspeed
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY CGHV59070 70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT Cree’s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package. PNP’sa: cCkGaHgeV5T9y0p7e:04F,4C0G22H4V,5494007107P0 Typical Performance Over 4.8 - 5.9 GHz (TC = 25˚C) Parameter 4.8 GHz 5.0 GHz 5.2 GHz 5.4 GHz 5.6 GHz Power Gain at 50 V 13.7 14.2 14.5 14.6 14.