Datasheet Details
| Part number | CGHV59350 |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 2.90 MB |
| Description | GaN HEMT |
| Datasheet |
 CGHV59350 Datasheet
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| Part number | CGHV59350 |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 2.90 MB |
| Description | GaN HEMT |
| Datasheet |
CGHV59350 Datasheet
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PRELIMINARY CGHV59350 350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems Cree’s CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440217 and 440218.
Package Type: PN: 440217 CGHV59350 and 440218 Typical Performance Over 5.2 - 5.9 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 5.2 GHz 5.55 GHz 5.9 GHz Output Power 440 445 490 Gain 10.5 10.5 11 Drain Efficiency 59 54 Note: Measured in the CGHV59350-TB under 100 μs pulse width, 10% duty cycle, PIN = 46 dBm 55 Units W dB % Rev 0.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
CGHV59350 | GaN HEMT | Wolfspeed |
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