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Cypress Semiconductor Electronic Components Datasheet

S25FL064L Datasheet

64-Mbit (8-Mbyte) 3.0V FL-L SPI Flash Memory

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S25FL064L
64-Mb (8-MB), 3.0 V FL-L
SPI Flash Memory
General Description
The Cypress FL-L Family devices are Flash Nonvolatile Memory products using:
Floating Gate technology
65-nm process lithography
The FL-L family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output
(Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit wide Quad I/O (QIO), and Quad Peripheral
Interface (QPI) commands. In addition, there are Double Data Rate (DDR) read commands for QIO and QPI that transfer address
and read data on both edges of the clock.
The architecture features a Page Programming Buffer that allows up to 256 bytes to be programmed in one operation and provides
individual 4 KB sector, 32 KB half block sector, 64 KB block sector, or entire chip erase.
By using FL-L family devices at the higher clock rates supported, with Quad commands, the instruction read transfer rate can match
or exceed traditional parallel interface, asynchronous, NOR Flash memories, while reducing signal count dramatically.
The FL-L family products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or
embedded applications. Provides an ideal storage solution for systems with limited space, signal connections, and power. These
memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM,
executing code directly (XIP), and storing re-programmable data.
Features
Serial Peripheral Interface (SPI) with Multi-I/O
Clock polarity and phase modes 0 and 3
Double Data Rate (DDR) option
Quad peripheral interface (QPI) option
Extended addressing: 24 or 32 bit address options
Serial command subset and footprint compatible with S25FL-
A, S25FL1-K, S25FL-P, S25FL-S, and S25FS-S SPI families
Multi I/O command subset and footprint compatible with S25-
FL-P, S25FL-S and S25FS-S SPI families
Read
Commands: Normal, Fast, Dual I/O, Quad I/O, DualO, Qua-
dO, DDR Quad I/O
Modes: Burst wrap, Continuous (XIP), QPI
Serial flash discoverable parameters (SFDP) for configura-
tion information
Program Architecture
256-Bytes page programming buffer
Program suspend and resume
Erase Architecture
Uniform 4 KB sector erase
Uniform 32 KB half block erase
Uniform 64 KB block erase
Chip erase
Erase suspend and resume
100,000 Program-Erase Cycles, minimum
20 Year Data Retention, minimum
Security Features
Status and configuration Register protection
Four security regions of 256-bytes each outside the main
Flash array
Legacy block protection: Block range
Individual and region protection
• Individual block lock: Volatile individual sector/block
• Pointer region: Nonvolatile sector/block range
• Power supply Lock-down, password, or permanent protec-
tion of security regions 2 and 3 and pointer region
Technology
65-nm Floating Gate technology
Single Supply Voltage with CMOS I/O
2.7 V to 3.6 V
Temperature Range / Grade
Industrial (–40°C to +85°C)
Industrial Plus (–40°C to +105°C)
Automotive, AEC-Q100 Grade 3 (–40°C to +85°C)
Automotive, AEC-Q100 Grade 2 (–40°C to +105°C)
Automotive, AEC-Q100 Grade 1 (–40°C to +125°C)
Packages (All Pb-free)
8-lead SOIC 208 mil (SOC008)
16-lead SOIC 300 mil (SO3016)
USON 4 4 mm (UNF008)
WSON 5 x 6 mm (WND008)
BGA-24 6 8 mm
• 5 5 ball (FAB024) footprint
• 4 6 ball (FAC024) footprint
Known good die and known tested die
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-12878 Rev. *F
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 29, 2019


Cypress Semiconductor Electronic Components Datasheet

S25FL064L Datasheet

64-Mbit (8-Mbyte) 3.0V FL-L SPI Flash Memory

No Preview Available !

Performance Summary
Maximum Read Rates SDR
Read
Fast Read
Dual Read
Quad Read
Command
Maximum Read Rates DDR
DDR Quad Read
Command
Typical Program and Erase Rates
Page Programming
4 KB Sector Erase
32 KB Half Block Erase
64 KB Block Erase
Operation
Typical Current Consumption
Read 50 MHz
Fast Read 5MHz
Fast Read 10 MHz
Fast Read 20 MHz
Fast Read 50 MHz
Fast Read 108 MHz
Quad I/O / QPI Read 108 MHz
Quad I/O / QPI DDR Read 33MHz
Quad I/O / QPI DDR Read 54MHz
Program
Erase
Standby SPI
Standby QPI
Deep Power Down
Operation
Document Number: 002-12878 Rev. *F
S25FL064L
Clock Rate (MHz)
50
108
108
108
MBps
6.25
13.5
27
54
Clock Rate (MHz)
54
MBps
54
KBps
569
61
106
142
Typical Current
10
10
10
10
15
20
20
15
17
17
17
20
35
2
Unit
mA
µA
Page 2 of 146


Part Number S25FL064L
Description 64-Mbit (8-Mbyte) 3.0V FL-L SPI Flash Memory
Maker Cypress
Total Page 30 Pages
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