CY14B108L Datasheet 8-Mbit (1024 K x 8/512 K x 16) nvSRAM

Manufacturer: Cypress (now Infineon)

Datasheet Details

The Cypress CY14B108L/CY14B108N is a fast static RAM (SRAM), with a nonvolatile element in each memory cell.

The memory is organized as 1024 Kbytes

CY14B108L CY14B108N 8-Mbit (1024 K × 8/512 K × 16) nvSRAM 8-Mbit (1024 K × 8/512 K × 16).

20 ns, 25 ns, and 45 ns access times.
Internally organized as 1024 K × 8 (CY14B108L) or 512 K ×16 (CY14B108N).
Hands off automatic STORE on power-down with only a small capacitor.
STORE to QuantumTrap nonvolatile elements initiated by software, device pin, or AutoStore on power-down.
RECALL to SRAM initiated by software or power-up.
Infinite Read, Write, and RECALL cycles.
1 million STORE cycles to QuantumTrap.
20 year data retention.
Single 3 V +20.