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CY14B108N - 8-Mbit (1024 K x 8/512 K x 16) nvSRAM

This page provides the datasheet information for the CY14B108N, a member of the CY14B108L 8-Mbit (1024 K x 8/512 K x 16) nvSRAM family.

Datasheet Summary

Description

The Cypress CY14B108L/CY14B108N is a fast static RAM (SRAM), with a nonvolatile element in each memory cell.

Features

  • 20 ns, 25 ns, and 45 ns access times.
  • Internally organized as 1024 K × 8 (CY14B108L) or 512 K ×16 (CY14B108N).
  • Hands off automatic STORE on power-down with only a small capacitor.
  • STORE to QuantumTrap nonvolatile elements initiated by software, device pin, or AutoStore on power-down.
  • RECALL to SRAM initiated by software or power-up.
  • Infinite Read, Write, and RECALL cycles.
  • 1 million STORE cycles to QuantumTrap.
  • 20 year data retention.
  • Single 3 V +20.

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Datasheet preview – CY14B108N

Datasheet Details

Part number CY14B108N
Manufacturer Cypress Semiconductor
File Size 605.00 KB
Description 8-Mbit (1024 K x 8/512 K x 16) nvSRAM
Datasheet download datasheet CY14B108N Datasheet
Additional preview pages of the CY14B108N datasheet.

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Full PDF Text Transcription

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CY14B108L CY14B108N 8-Mbit (1024 K × 8/512 K × 16) nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features ■ 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024 K × 8 (CY14B108L) or 512 K ×16 (CY14B108N) ■ Hands off automatic STORE on power-down with only a small capacitor ■ STORE to QuantumTrap nonvolatile elements initiated by software, device pin, or AutoStore on power-down ■ RECALL to SRAM initiated by software or power-up ■ Infinite Read, Write, and RECALL cycles ■ 1 million STORE cycles to QuantumTrap ■ 20 year data retention ■ Single 3 V +20, –10 operation ■ Industrial temperature ■ Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) ■ Pb-free and restriction of hazardous substances (RoHS) compliant Functional
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