Datasheet4U Logo Datasheet4U.com

CY14B104NA Datasheet 4-Mbit (512K x 8/256K x 16) nvSRAM

Manufacturer: Cypress (now Infineon)

Download the CY14B104NA datasheet PDF. This datasheet also includes the CY14B104LA variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY14B104LA-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

■ STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down ■ RECALL to SRAM initiated by software or power-up ■ Infinite read, write, and recall cycles ■ 1 million STORE cycles to QuantumTrap ■ 20 year data retention ■ Single 3 V +20, –10 operation ■ Industrial temperature The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell.

The memory is organized as 512K by

Overview

CY14B104LA CY14B104NA 4-Mbit (512K × 8/256K × 16) nvSRAM 4-Mbit (512K × 8/256K × 16).

Key Features

  • 20 ns, 25 ns, and 45 ns access times.
  • Internally organized as 512K × 8 (CY14B104LA) or 256K × 16 (CY14B104NA).
  • Packages.
  • 44-/54-pin thin small outline package (TSOP) Type II.
  • 48-ball fine-pitch ball grid array (FBGA).
  • Pb-free and restriction of hazardous substances (RoHS) compliant.
  • Hands off automatic STORE on power-down with only a small capacitor Functional.

More Datasheets from Cypress (now Infineon)

Part Number Description
CY14B104N 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B104K 4-Mbit (512 K x 8/256 K x 16) nvSRAM
CY14B104L 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B104M 4-Mbit (512 K x 8/256 K x 16) nvSRAM
CY14B101I 1-Mbit (128 K x 8) Serial (I2C) nvSRAM
CY14B101J 1-Mbit (128 K X 8) Serial (I2C) nvSRAM
CY14B101K 1 Mbit (128K x 8) nvSRAM
CY14B101KA 1-Mbit nvSRAM
CY14B101L 1-Mbit (128K x 8) nvSRAM