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CY14B104NA - 4-Mbit (512K x 8/256K x 16) nvSRAM

This page provides the datasheet information for the CY14B104NA, a member of the CY14B104LA 4-Mbit (512K x 8/256K x 16) nvSRAM family.

Datasheet Summary

Description

STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down RECALL to SRAM initiated by software or power-up Infinite read, write, and recall cycles 1 million STORE cycles to QuantumTrap 20 year data retention Single 3

Features

  • 20 ns, 25 ns, and 45 ns access times.
  • Internally organized as 512K × 8 (CY14B104LA) or 256K × 16 (CY14B104NA).
  • Packages.
  • 44-/54-pin thin small outline package (TSOP) Type II.
  • 48-ball fine-pitch ball grid array (FBGA).
  • Pb-free and restriction of hazardous substances (RoHS) compliant.
  • Hands off automatic STORE on power-down with only a small capacitor Functional.

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Datasheet preview – CY14B104NA

Datasheet Details

Part number CY14B104NA
Manufacturer Cypress Semiconductor
File Size 619.78 KB
Description 4-Mbit (512K x 8/256K x 16) nvSRAM
Datasheet download datasheet CY14B104NA Datasheet
Additional preview pages of the CY14B104NA datasheet.

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Other Datasheets by Cypress Semiconductor
  • CY14B104N - 4-Mbit (512K x 8/256K x 16) nvSRAM
  • CY14B104K - 4-Mbit (512 K x 8/256 K x 16) nvSRAM
  • CY14B104L - 4-Mbit (512K x 8/256K x 16) nvSRAM
  • CY14B104LA - 4-Mbit (512K x 8/256K x 16) nvSRAM
  • CY14B104M - 4-Mbit (512 K x 8/256 K x 16) nvSRAM
  • CY14B101I - 1-Mbit (128 K x 8) Serial (I2C) nvSRAM
  • CY14B101J - 1-Mbit (128 K X 8) Serial (I2C) nvSRAM
  • CY14B101K - 1 Mbit (128K x 8) nvSRAM

Full PDF Text Transcription

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CY14B104LA CY14B104NA 4-Mbit (512K × 8/256K × 16) nvSRAM 4-Mbit (512K × 8/256K × 16) nvSRAM Features ■ 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K × 8 (CY14B104LA) or 256K × 16 (CY14B104NA) ■ Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) ■ Pb-free and restriction of hazardous substances (RoHS) compliant ■ Hands off automatic STORE on power-down with only a small capacitor Functional Description ■ STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down ■ RECALL to SRAM initiated by software or power-up ■ Infinite read, write, and recall cycles ■ 1 million STORE cycles to QuantumTrap ■ 20 year data retention ■ Single 3 V +20, –10 operation ■ Industrial
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