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CY14B104LA Datasheet

Manufacturer: Cypress (now Infineon)
CY14B104LA datasheet preview

CY14B104LA Details

Part number CY14B104LA
Datasheet CY14B104LA-CypressSemiconductor.pdf
File Size 619.78 KB
Manufacturer Cypress (now Infineon)
Description 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA page 2 CY14B104LA page 3

CY14B104LA Overview

STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down RECALL to SRAM initiated by software or power-up Infinite read, write, and recall cycles 1 million STORE cycles to QuantumTrap 20 year data retention Single 3 V +20, 10 operation Industrial temperature The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory...

CY14B104LA Key Features

  • 20 ns, 25 ns, and 45 ns access times
  • Internally organized as 512K × 8 (CY14B104LA) or 256K × 16
  • Packages
  • 44-/54-pin thin small outline package (TSOP) Type II
  • 48-ball fine-pitch ball grid array (FBGA)
  • Pb-free and restriction of hazardous substances (RoHS) pliant
  • Hands off automatic STORE on power-down with only a small capacitor
  • STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down
  • RECALL to SRAM initiated by software or power-up
  • Infinite read, write, and recall cycles

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